Electrical and Electronic Engineering - Research Publications
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ItemSpectrally Selective Mid-Wave Infrared Detection Using Fabry-Pérot Cavity Enhanced Black Phosphorus 2D Photodiodes.(American Chemical Society, 2020-10-27)Thin two-dimensional (2D) material absorbers have the potential to reduce volume-dependent thermal noise in infrared detectors. However, any reduction in noise must be balanced against lower absorption from the thin layer, which necessitates advanced optical architectures. Such architectures can be particularly effective for applications that require detection only within a specific narrow wavelength range. This study presents a Fabry-Pérot cavity enhanced bP/MoS2 midwave infrared (MWIR) photodiode. This simple structure enables tunable narrow-band (down to 0.42 μm full width at half-maximum) photodetection in the 2-4 μm range by adjusting the thickness of the Fabry-Pérot cavity resonator. This is achieved while maintaining room-temperature performance metrics comparable to previously reported 2D MWIR detectors. Zero bias specific detectivity and responsivity values of up to 1.7 × 109 cm Hz1/2 W-1 and 0.11 A W-1 at λ = 3.0 μm are measured with a response time of less than 3 ns. These results introduce a promising family of 2D detectors with applications in MWIR spectroscopy.
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ItemVisible to Short-Wave Infrared Photodetectors Based on ZrGeTe4 van der Waals Materials(AMER CHEMICAL SOC, 2021-09-29)The self-terminated, layered structure of van der Waals materials introduces fundamental advantages for infrared (IR) optoelectronic devices. These are mainly associated with the potential for low noise while maintaining high internal quantum efficiency when reducing IR absorber thicknesses. In this study, we introduce a new van der Waals material candidate, zirconium germanium telluride (ZrGeTe4), to a growing family of promising IR van der Waals materials. We find the bulk form ZrGeTe4 has an indirect band edge around ∼0.5 eV, in close agreement with previous theoretical predictions. This material is found to be stable up to 140 °C and shows minimal compositional variation even after >30 days storage in humid air. We demonstrate simple proof-of-concept broad spectrum photodetectors with responsivities above 0.1 AW-1 across both the visible and short-wave infrared wavelengths. This corresponds to a specific detectivity of ∼109 cm Hz1/2 W-1 at λ = 1.4 μm at room temperature. These devices show a linear photoresponse vs illumination intensity relationship over ∼4 orders of magnitude, and fast rise/fall times of ∼50 ns, also verified by a 3 dB roll-off frequency of 5.9 MHz. As the first demonstration of photodetection using ZrGeTe4, these characteristics measured on a simple proof-of-concept device show the exciting potential of the ZrGeTe4 for room temperature IR optoelectronic applications.
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ItemCopper Tetracyanoquinodimethane (CuTCNQ): A Metal-Organic Semiconductor for Room-Temperature Visible to Long-Wave Infrared Photodetection(AMER CHEMICAL SOC, 2021-08-18)Mid-wave and long-wave infrared (MWIR and LWIR) detection play vital roles in applications that include health care, remote sensing, and thermal imaging. However, detectors in this spectral range often require complex fabrication processes and/or cryogenic cooling and are typically expensive, which motivates the development of simple alternatives. Here, we demonstrate broadband (0.43-10 μm) room-temperature photodetection based on copper tetracyanoquinodimethane (CuTCNQ), a metal-organic semiconductor, synthesized via a facile wet-chemical reaction. The CuTCNQ crystals are simply drop-cast onto interdigitated electrode chips to realize photoconductors. The photoresponse is governed by a combination of interband (0.43-3.35 μm) and midgap (3.35-10 μm) transitions. The devices show response times (∼365 μs) that would be sufficient for many infrared applications (e.g., video rate imaging), with a frequency cutoff point of 1 kHz.
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ItemLong-Wave Infrared Photodetectors Based on 2D Platinum Diselenide atop Optical Cavity Substrates(AMER CHEMICAL SOC, 2021-04-27)Long-wave infrared (LWIR) photodetection is of high technological importance, having a wide range of applications that include thermal imaging and spectroscopy. Two-dimensional (2D) noble-transition-metal dichalcogenides, platinum diselenide (PtSe2) in particular, have recently shown great promise for infrared detection. However, previous studies have mainly focused on wavelengths up to the short-wave infrared region. In this work, we demonstrate LWIR photodetectors based on multilayer PtSe2. In addition, we present an optical cavity substrate that enhances the light-matter interaction in 2D materials and thus their photodetection performance in the LWIR spectral region. The PtSe2 photoconductors fabricated on the TiO2/Au optical cavity substrate exhibit responsivities up to 54 mA/W to LWIR illumination at a wavelength of 8.35 μm. Moreover, these devices show a fast photoresponse with a time constant of 54 ns to white light illumination. The findings of this study reveal the potential of multilayer PtSe2 for fast and broadband photodetection from visible to LWIR wavelengths.
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ItemLong -Wave In a ed Photodetectors Based on Platinum Diselenide(IEEE, 2020)We demonstrate long wave infrared photodetectors based on the transition metal dichalcogenide platinum diselenide (PtSe2) in its bulk form for the first time to our knowledge. Fabricated devices show sub-millisecond response times.
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ItemVisible to Long-Wave Infrared Photodetectors based on Copper Tetracyanoquinodimethane (CuTCNQ) Crystals(OSA - Optical Society of America, 2020-08-01)We demonstrate room-temperature photodetectors at wavelengths from visible (450 nm, 532 nm) to near- (850 nm), short-wave (1550 nm), mid-wave (4.5 \mu m) and long-wave (8.35 \mu m) infrared. These are based on drop-cast Cu TCNQ crystals.
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ItemPolarization-Converting Plasmonic Nanoantennas for Light Absorption Enhancement in Anisotropic 2D Black Phosphorus(IEEE, 2021)Optical anisotropy and thinness of 2D black phosphorous (bP) lead to weak light absorption, which limits the performance of bP-based photodetectors. We demonstrate that T-shaped nanoantennas can be integrated with bP to overcome this issue.
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ItemLongwave Infrared Photoresponse in Copper 7, 7, 8, 8-tetracyano-2, 3, 5, 6-tetraflouroquinodimethane (CuTCNQF)(OSA & IEEE, 2021-06-01)The detection of light in the longwave infrared (LWIR) region is crucial for many applications such as environmental monitoring, thermal imaging and surveillance. Many commercial LWIR photodetectors involve complex fabrication processes, require cryogenic temperatures or exhibit slow photoresponse. Hence, there is a continuous pursuit of developing room-temperature, on-chip LWIR photodetectors, using simple fabrication processes [1]. Metal-organic charge transfer complexes typically have a narrow bandgap, which allows them to absorb LWIR wavelengths [2]. Here, we report room temperature LWIR photoresponse in one such charge transfer complex, ie. copper 7, 7, 8, 8-tetracyano-2, 3, 5, 6-tetraflouroquinodimethane (CuTCNQF 4 ), achieved via simple synthesis and fabrication processes.
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ItemLight-Matter Interaction Enhancement in Anisotropic 2D Black Phosphorus via Polarization-Tailoring Nano-Optics(AMER CHEMICAL SOC, 2021-04-21)Black phosphorus (bP), a two-dimensional (2D) layered material, has shown great potential for infrared (IR) optoelectronics owing to the narrow and direct bandgap it exhibits when in multilayer form. However, its thinness and optical anisotropy lead to weak light absorption, which limits the performance of bP-based photodetectors. In this work, we explore plasmonic nanoantennas, optical cavities, and their hybrids that can be integrated with multilayer bP to enhance its light absorption. This is achieved by near-field light intensity enhancement and polarization conversion. In addition, we demonstrate that these nanostructures can boost the spontaneous emission from bP. Light absorption enhancements of up to 185 and 16 times are obtained for linearly polarized and unpolarized IR light, respectively, in comparison with a commonly used device architecture (bP on SiO2/Si). Moreover, IR light emission enhancements of up to 18 times are achieved. The optical nanostructures presented here can be exploited for enhancing the detectivity of photodetectors and electroluminescence efficiency of light-emitting diodes based on bP and other 2D materials.
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ItemInfrared Photodetectors Based on 2D Materials and Nanophotonics(WILEY-V C H VERLAG GMBH, 2022-04)Abstract 2D materials, such as graphene, transition metal dichalcogenides, black phosphorus, and tellurium, have been demonstrated to be promising building blocks for the fabrication of next‐generation high‐performance infrared (IR) photodetectors with diverse device architectures and impressive device performance. Integrating IR photodetectors with nanophotonic structures, such as surface plasmon structures, optical waveguides, and optical cavities, has proven to be a promising strategy to maximize the light absorption of 2D absorbers, thus enhancing the detector performance. In this review, the state‐of‐the‐art progress of IR photodetectors is comprehensively summarized based on 2D materials and nanophotonic structures. First, the advantages of using 2D materials for IR photodetectors are discussed. Following that, 2D material‐based IR detectors are classified based on their composition, and their detection mechanisms, key figures‐of‐merit, and the principle of absorption enhancement are discussed using nanophotonic approaches. Then, recent advances in 2D material‐based IR photodetectors are reviewed, categorized by device architecture, i.e., photoconductors, van der Waals heterojunctions, and hybrid systems consisting of 2D materials and nanophotonic structures. The review is concluded by providing perspectives on the challenges and future directions of this field.