School of Physics

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Deterministic implantation of donor ions in near-surface nanoarrays for silicon quantum computing

Robson, Simon Graeme ( 2023-08)

Remarkable theoretical and experimental progress has been achieved with donor-based silicon quantum computing architectures in the last decade, firmly cementing this implementation as one of the forerunners in the race to build the first large-scale quantum computer. By employing near-surface donor atoms (P, As, Sb, Bi) as the storage medium, both their nuclear and electronic spin states can be used to encode quantum information. Silicon is an excellent host material, having the advantage that donor atoms can easily be incorporated into its lattice, as well as being able to be isotopically enriched into 28Si, giving donor spin coherence times in excess of 30 s. Despite a significant number of experimental challenges, the end goal of creating a near-surface entangled donor array to enable multi-qubit operations is in sight. The aim of this work is to address some significant recent advances towards this goal through the use of directed implantation of single donor ions. Ion implantation has previously been shown to be a valid method for introducing donor-qubits into silicon, and for decades has been a well-established fabrication technique in the classical semiconductor industry. In this work, it is shown that by employing silicon-based active detection substrates connected to an ultra-low noise charge-sensitive preamplifier, single donor ions can be deterministically implanted at depths between 10 - 20 nm with a detection confidence exceeding 99.8%. The recent acquisition of an in-situ stepped nanostencil extends this concept further to allow the controlled placement of single donors to a lateral precision of around 50 nm. Through the use of a step-and-repeat procedure, the ability to form two-dimensional qubit nanoarrays with this system is demonstrated. With the technique readily capable of scaling up to hundreds of qubits or more, this represents a significant milestone towards the realisation of a top-down solid state qubit architecture. A complementary method for single donor placement in silicon is also given, again using ion implantation. It involves the use of a focused ion beam instrument that has been modified to include a keV electron-beam-ion-source to give access to a large selection of ion species, focused to a 180 nm spot size. By integration of the same high-confidence single ion detection technology, it is shown that this technique is also capable of creating large-scale donor arrays in silicon, but without the need for a physical mask. Its use as not just a single ion implanter, but also a novel instrument for near-surface characterisation of semiconductors is also presented. The system's functionality is demonstrated through the identification of fabrication faults in a silicon-based device that otherwise may have gone undetected through conventional characterisation methods. The adaptation of the focused ion beam technique into an efficient method for creating micro-volumes of isotopically pure 28Si is also explored. This is an important area of focus required to achieve ultra-long qubit coherence times, with the results of a preliminary characterisation confirming the technique's suitability. Finally, adapting the single ion detection technology to demonstrate a new approach for performing high-resolution Rutherford backscattering spectrometry is also presented. Some major advantages include a small physical detector footprint and ease of integration into existing beamline structures. In keeping with the overall theme of this study, the system is used to analyse samples pertinent to silicon donor quantum computing, such as shallowly implanted donors and enriched 28Si wafers. The series of experiments performed in this thesis thus represent some significant steps towards achieving the scalable fabrication of a donor-based silicon quantum computer.
Donor activation and isotopic enrichment of silicon via ion implantation for quantum computing

Holmes, Danielle ( 2020)

Quantum computers are set to revolutionise technology by harnessing the immense promise of quantum mechanics, the law governing nature on the atomic scale, to enable a dramatically increased efficiency for certain algorithms over their classical counterparts. By storing and manipulating information on quantum bits (qubits), which can exist in a superposition of 0 and 1 at the same time and can be entangled with each other, instead of classical bits, which are strictly 0 or 1, certain problems that are intractable with classical computation can be solved. To realise a qubit, a quantum system that exists in two or more states, such as a spin in a magnetic field, is required. Group V donors in silicon (Si) are promising qubit candidates that can store quantum information in both the spin of the donor nucleus and the donor electron that it binds by the Coulomb potential. Si offers an ideal platform due to its isotopic composition of predominantly spin-zero nuclei (over 92% is 28Si with nuclear spin I=0), that can provide a noise-free host lattice, and the wealth of knowledge accumulated in the microelectronics industry. The most versatile method for introducing donors in Si is ion implantation, a foundational technique of the information technology industry that has already demonstrated the production of long-lived phosphorus (P) donor qubits. This method is explored in this thesis. The bismuth (Bi) donor offers some useful properties for quantum devices, such as an increased quantum memory, clock transitions and the potential to couple to superconducting flux qubits. To fabricate a quantum device that employs Bi, it is necessary to implant and activate a Bi donor in Si. Here, the optimum implantation and thermal annealing strategy is determined to maximise the operational yield of near-surface Bi donor qubits by repairing the Si crystal damage and electrically activating the donor, evidenced by the measurement of Bi donor electron spin resonance. A further critical issue in donor qubit fabrication is the depletion of the nuclear spin-1/2 29Si isotope to extend coherence times, which would be beneficial to be performed routinely. Accordingly, a method of isotopically enriching a surface layer of natural Si via sputtering during the high fluence implantation of 28Si- ions was developed. This technique increases the accessibility of producing spin-free 28Si material by requiring only a conventional ion implanter and naturally abundant sources. The successful recrystallisation of this 28Si layer and the demonstration of increased coherence times for implanted P donors make this a promising technique for integrating into the fabrication of implanted donor qubits. Finally, the measurement of the full extent of the 29Si depletion on the coherence time requires a low concentration of donors implanted into this ~100 nm thick surface layer of 28Si. Therefore,a high sensitivity technique capable of probing a small number of spins is essential. This challenge is addressed by the design and implementation of a low-temperature electrically detected magnetic resonance (EDMR) system, capable of measuring spin transitions of donor electrons in Si with a sensitivity at least 5 orders of magnitude greater than for conventional electron spin resonance systems. In future, this will allow for the coherence times of donors implanted into our enriched 28Si layers to be determined from the linewidth of EDMR signals. This thesis lays the foundations for exploiting Bi donor clock transitions in qubit devices and addresses the challenge of providing an isotopically enriched 28Si matrix for donor qubits that is shown to extend qubit coherence times and thus makes progress towards the scalable fabrication of a donor spin quantum computer.

School of Physics - Theses

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