School of Physics - Research Publications
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ItemInstant-in-Air Liquid Metal Printed Ultrathin Tin Oxide for High-Performance Ammonia Sensors(Wiley, 2024)Liquid metal-based printing techniques are emerging as an exemplary platform for harvesting non-layered 2D materials with a thickness down to a few nanometres, leading to an ultra-large surface-area-to-volume ratio that is ideal for sensing applications. In this work, the synthesis of 2D tin dioxide (SnO2) by exfoliating the surface oxide of molten tin is reported which highlights the enhanced sensing capability of the obtained materials to ammonia (NH3) gas is reported. It is demonstrated that amperometric gas sensors based on liquid metal-derived 2D SnO2 nanosheets can achieve excellent NH3 sensing performance at low temperature (150 °C) with and without UV light assistance. Detection over a wide range of NH3 concentrations (5–500 ppm) is observed, revealing a limit of detection at the parts per billion (ppb) level. The 2D SnO2 nanosheets also feature excellent cross-interference performance toward different organic and inorganic gas species, showcasing a high selectivity. Further, ab initio DFT calculations reveal the NH3 adsorption mechanism is dominated by chemisorption with a charge transfer into 2D SnO2 nanosheets. In addition, a proof of concept for prototype flexible ammonia sensors is demonstrated by depositing 2D SnO2 on a polyimide substrate, signifying the high potential of employing liquid metal printed SnO2 for realizing wearable gas sensors.
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ItemNo Preview AvailableThe Acoustophotoelectric Effect: Efficient Phonon-Photon-Electron Coupling in Zero-Voltage-Biased 2D SnS2 for Broad-Band Photodetection(AMER CHEMICAL SOC, 2023-09-27)Two-dimensional (2D) layered metal dichalcogenides constitute a promising class of materials for photodetector applications due to their excellent optoelectronic properties. The most common photodetectors, which work on the principle of photoconductive or photovoltaic effects, however, require either the application of external voltage biases or built-in electric fields, which makes it challenging to simultaneously achieve high responsivities across broad-band wavelength excitation─especially beyond the material's nominal band gap─while producing low dark currents. In this work, we report the discovery of an intricate phonon-photon-electron coupling─which we term the acoustophotoelectric effect─in SnS2 that facilitates efficient photodetection through the application of 100 MHz order propagating surface acoustic waves (SAWs). This effect not only reduces the band gap of SnS2 but also provides the requisite momentum for indirect band gap transition of the photoexcited charge carriers, to enable broad-band photodetection beyond the visible light range, while maintaining pA-order dark currents─ without the need for any external voltage bias. More specifically, we show in the infrared excitation range that it is possible to achieve up to 8 orders of magnitude improvement in the material's photoresponsivity compared to that previously reported for SnS2-based photodetectors, in addition to exhibiting superior performance compared to most other 2D materials reported to date for photodetection.
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ItemRoom Temperature Bias-Selectable, Dual-Band Infrared Detectors Based on Lead Sulfide Colloidal Quantum Dots and Black Phosphorus(AMER CHEMICAL SOC, 2023-06-15)A single photodetector capable of switching its peak spectral photoresponse between two wavelength bands is highly useful, particularly for the infrared (IR) bands in applications such as remote sensing, object identification, and chemical sensing. Technologies exist for achieving dual-band IR detection with bulk III-V and II-VI materials, but the high cost and complexity as well as the necessity for active cooling associated with some of these technologies preclude their widespread adoption. In this study, we leverage the advantages of low-dimensional materials to demonstrate a bias-selectable dual-band IR detector that operates at room temperature by using lead sulfide colloidal quantum dots and black phosphorus nanosheets. By switching between zero and forward bias, these detectors switch peak photosensitive ranges between the mid- and short-wave IR bands with room temperature detectivities of 5 × 109 and 1.6 × 1011 cm Hz1/2 W-1, respectively. To the best of our knowledge, these are the highest reported room temperature values for low-dimensional material dual-band IR detectors to date. Unlike conventional bias-selectable detectors, which utilize a set of back-to-back photodiodes, we demonstrate that under zero/forward bias conditions the device's operation mode instead changes between a photodiode and a phototransistor, allowing additional functionalities that the conventional structure cannot provide.
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ItemNo Preview AvailableFlexible Vanadium Dioxide Photodetectors for Visible to Longwave Infrared Detection at Room Temperature ((press release associated article should be online on 21.06.2023))(WILEY-V C H VERLAG GMBH, 2023-10-13)Abstract Flexible optoelectronics is a rapidly growing field, with a wide range of potential applications. From wearable sensors to bendable solar cells, curved displays, and curved focal plane arrays, the possibilities are endless. The criticality of flexible photodetectors for many of these applications is acknowledged, however, devices that are demonstrated thus far are limited in their spectral range. In this study, flexible photodetectors are demonstrated using a VOx nanoparticle ink, with an extremely broad operating wavelength range of 0.4 to 20 µm. This ink is synthesized using a simple and scalable wet‐chemical process. These photodetectors operate at room temperature and exhibit minimal variance in performance even when bent at angles of up to 100 ° at a bend radius of 6.4 mm. In addition, rigorous strain testing of 100 bend and release cycles revealed a photoresponse with a standard deviation of only 0.55%. This combination of mechanical flexibility, wide spectral response, and ease of fabrication makes these devices highly desirable for a wide range of applications, including low‐cost wearable sensors and hyperspectral imaging systems.
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ItemCompact Chemical Identifier Based on Plasmonic Metasurface Integrated with Microbolometer Array(WILEY-V C H VERLAG GMBH, 2022-04)Abstract The identification of chemicals from their mid‐infrared spectra has applications that include industrial production of chemicals, food production, pharmaceutical manufacturing, and environmental monitoring. This is generally done using laboratory benchtop tools, such as the Fourier transform infrared spectrometer. Although such systems offer high performance, alternative platforms offering reduced size, weight, and cost can enable a host of new applications, e.g. in consumer personal electronics. Here a compact microspectrometer platform for chemical identification, comprising a mid‐infrared metasurface integrated with a lightweight (≈1 g) and very small (≈1 cm3) microbolometer‐based thermal camera is experimentally demonstrated. A machine learning algorithm is trained to analyze the microspectrometer output and classify chemicals based on their mid‐infrared fingerprints. High accuracy identification of four liquid chemicals, concentration quantification of ethyl lactate in cyclohexane down to subpercentage levels, and the classification of food and drug samples is demonstrated.
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ItemNo Preview AvailableAtomically Thin Gallium Nitride for High-Performance Photodetection(WILEY-V C H VERLAG GMBH, 2023-08)Abstract Gallium nitride (GaN) technology has matured and commercialised for optoelectronic devices in the ultraviolet (UV) spectrum over the last few decades. Simultaneously, atomically thin materials with unique features have emerged as contenders for device miniaturization. However, the lack of successful techniques to produce ultra‐thin GaN prevents access to these new predicted properties. Here, this important gap is addressed by printing millimeter‐large ultra‐thin GaN nanosheets (NS) (≈1.4 nm) using a simple two‐step process that simultaneously introduces nitrogen point defects. This extends the photoelectrical spectral response from UV (280 nm) to near infrared (NIR) (1080 nm). The GaN‐based photodetectors display excellent figures of merit, having a responsivity (2.72 × 104 A W−1) up to four orders of magnitude higher than the commercial photodetectors at room temperature, despite being 102–103 times thinner. The photodetectors exhibit fast switching, with rise and decay time in the range of microseconds. The state‐of‐the‐art device performance originates from the ultra‐thin nature of GaN NS coupled with nitrogen point vacancies in the synthesis process. This work presents the opportunity to significantly expand the reach of GaN semiconductor technology and may lead to applications in high‐performance miniaturized imaging systems, spectroscopy, communication, and integrated optoelectronic circuits.
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ItemInfrared modulation via near-room-temperature phase transitions of vanadium oxides & core–shell composites(Royal Society of Chemistry (RSC), 2023)Vanadium oxides (VOx) are highly promising materials for heat retardant coatings, enabled by their insulator-to-metal phase transition (IMT). Currently, this IMT typically occurs at 68 °C, well above room temperature. Here, we develop a dopant-free approach to lower the IMT temperature to ∼40 °C enabling near-room temperature infrared modulation, by simple, solution phase synthesis. This is achieved by both controlling the stoichiometry of the metal oxide and by using a SiO2 shell around the VOx particles, with the difference in thermal expansion coefficient between SiO2 and VOx inducing sufficient strain in the VOx to dramatically lower the IMT temperature. This approach enables the production of a functional solution of suspended VOx nanoparticles with near-room temperature IMT. The combination of near-room temperature IMT and solution phase nanoparticles dramatically increases the ease, scalability, and efficacy of VOx application.
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ItemSpectrally Selective Mid-Wave Infrared Detection Using Fabry-Pérot Cavity Enhanced Black Phosphorus 2D Photodiodes.(American Chemical Society, 2020-10-27)Thin two-dimensional (2D) material absorbers have the potential to reduce volume-dependent thermal noise in infrared detectors. However, any reduction in noise must be balanced against lower absorption from the thin layer, which necessitates advanced optical architectures. Such architectures can be particularly effective for applications that require detection only within a specific narrow wavelength range. This study presents a Fabry-Pérot cavity enhanced bP/MoS2 midwave infrared (MWIR) photodiode. This simple structure enables tunable narrow-band (down to 0.42 μm full width at half-maximum) photodetection in the 2-4 μm range by adjusting the thickness of the Fabry-Pérot cavity resonator. This is achieved while maintaining room-temperature performance metrics comparable to previously reported 2D MWIR detectors. Zero bias specific detectivity and responsivity values of up to 1.7 × 109 cm Hz1/2 W-1 and 0.11 A W-1 at λ = 3.0 μm are measured with a response time of less than 3 ns. These results introduce a promising family of 2D detectors with applications in MWIR spectroscopy.
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ItemVisible to Short-Wave Infrared Photodetectors Based on ZrGeTe4 van der Waals Materials(AMER CHEMICAL SOC, 2021-09-29)The self-terminated, layered structure of van der Waals materials introduces fundamental advantages for infrared (IR) optoelectronic devices. These are mainly associated with the potential for low noise while maintaining high internal quantum efficiency when reducing IR absorber thicknesses. In this study, we introduce a new van der Waals material candidate, zirconium germanium telluride (ZrGeTe4), to a growing family of promising IR van der Waals materials. We find the bulk form ZrGeTe4 has an indirect band edge around ∼0.5 eV, in close agreement with previous theoretical predictions. This material is found to be stable up to 140 °C and shows minimal compositional variation even after >30 days storage in humid air. We demonstrate simple proof-of-concept broad spectrum photodetectors with responsivities above 0.1 AW-1 across both the visible and short-wave infrared wavelengths. This corresponds to a specific detectivity of ∼109 cm Hz1/2 W-1 at λ = 1.4 μm at room temperature. These devices show a linear photoresponse vs illumination intensity relationship over ∼4 orders of magnitude, and fast rise/fall times of ∼50 ns, also verified by a 3 dB roll-off frequency of 5.9 MHz. As the first demonstration of photodetection using ZrGeTe4, these characteristics measured on a simple proof-of-concept device show the exciting potential of the ZrGeTe4 for room temperature IR optoelectronic applications.
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ItemCopper Tetracyanoquinodimethane (CuTCNQ): A Metal-Organic Semiconductor for Room-Temperature Visible to Long-Wave Infrared Photodetection(AMER CHEMICAL SOC, 2021-08-18)Mid-wave and long-wave infrared (MWIR and LWIR) detection play vital roles in applications that include health care, remote sensing, and thermal imaging. However, detectors in this spectral range often require complex fabrication processes and/or cryogenic cooling and are typically expensive, which motivates the development of simple alternatives. Here, we demonstrate broadband (0.43-10 μm) room-temperature photodetection based on copper tetracyanoquinodimethane (CuTCNQ), a metal-organic semiconductor, synthesized via a facile wet-chemical reaction. The CuTCNQ crystals are simply drop-cast onto interdigitated electrode chips to realize photoconductors. The photoresponse is governed by a combination of interband (0.43-3.35 μm) and midgap (3.35-10 μm) transitions. The devices show response times (∼365 μs) that would be sufficient for many infrared applications (e.g., video rate imaging), with a frequency cutoff point of 1 kHz.