School of Physics - Research Publications

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    Stark shift control of single optical centers in diamond
    Tamarat, P ; Gaebel, T ; Rabeau, JR ; Khan, M ; Greentree, AD ; Wilson, H ; Hollenberg, LCL ; Prawer, S ; Hemmer, P ; Jelezko, F ; Wrachtrup, J (AMERICAN PHYSICAL SOC, 2006-08-25)
    Lifetime-limited optical excitation lines of single nitrogen-vacancy (NV) defect centers in diamond have been observed at liquid helium temperature. They display unprecedented spectral stability over many seconds and excitation cycles. Spectral tuning of the spin-selective optical resonances was performed via the application of an external electric field (i.e., the Stark shift). A rich variety of Stark shifts were observed including linear as well as quadratic components. The ability to tune the excitation lines of single NV centers has potential applications in quantum information processing.
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    Progress in silicon-based quantum computing
    Clark, RG ; Brenner, R ; Buehler, TM ; Chan, V ; Curson, NJ ; Dzurak, AS ; Gauja, E ; Goan, HS ; Greentree, AD ; Hallam, T ; Hamilton, AR ; Hollenberg, LCL ; Jamieson, DN ; McCallum, JC ; Milburn, GJ ; O'Brien, JL ; Oberbeck, L ; Pakes, CI ; Prawer, SD ; Reilly, DJ ; Ruess, FJ ; Schofield, SR ; Simmons, MY ; Stanley, FE ; Starrett, RP ; Wellard, C ; Yang, C ; Knight, PL ; Hinds, EA ; Plenio, MB (ROYAL SOC, 2003-07-15)
    We review progress at the Australian Centre for Quantum Computer Technology towards the fabrication and demonstration of spin qubits and charge qubits based on phosphorus donor atoms embedded in intrinsic silicon. Fabrication is being pursued via two complementary pathways: a 'top-down' approach for near-term production of few-qubit demonstration devices and a 'bottom-up' approach for large-scale qubit arrays with sub-nanometre precision. The 'top-down' approach employs a low-energy (keV) ion beam to implant the phosphorus atoms. Single-atom control during implantation is achieved by monitoring on-chip detector electrodes, integrated within the device structure. In contrast, the 'bottom-up' approach uses scanning tunnelling microscope lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. In both cases, surface electrodes control the qubit using voltage pulses, and dual single-electron transistors operating near the quantum limit provide fast read-out with spurious-signal rejection.
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    Electron exchange coupling for single-donor solid-state spin qubits
    Wellard, CJ ; Hollenberg, LCL ; Parisoli, F ; Kettle, LM ; Goan, HS ; McIntosh, JAL ; Jamieson, DN (AMER PHYSICAL SOC, 2003-11)
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    Quantum phase transitions of light
    GREENTREE, ANDREW ; TAHAN, CHARLES ; COLE, JARED ; HOLLENBERG, LLOYD ( 2006)