Now showing 1 - 4 of 4
ItemIon beam induced charge and numerical modeling study of novel detector devices for single ion implantationHopf, T ; Jamieson, DN ; Hearne, SM ; Yang, C ; Pakes, CI ; Dzurak, AS ; Gauja, E ; Clark, RG (ELSEVIER, 2005-04-01)
ItemControlled single electron transfer between Si : P dotsBuehler, TM ; Chan, V ; Ferguson, AJ ; Dzurak, AS ; Hudson, FE ; Reilly, DJ ; Hamilton, AR ; Clark, RG ; Jamieson, DN ; Yang, C ; Pakes, CI ; Prawer, S (AMER INST PHYSICS, 2006-05-08)We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a differential bias across the dots, electron transfer is observed, using single electron transistors in both dc- and rf-mode as charge detectors. With the possibility to scale the dots down to few and even single atoms these results open the way to a new class of precision-doped quantum dots in silicon.
ItemProgress in silicon-based quantum computingClark, RG ; Brenner, R ; Buehler, TM ; Chan, V ; Curson, NJ ; Dzurak, AS ; Gauja, E ; Goan, HS ; Greentree, AD ; Hallam, T ; Hamilton, AR ; Hollenberg, LCL ; Jamieson, DN ; McCallum, JC ; Milburn, GJ ; O'Brien, JL ; Oberbeck, L ; Pakes, CI ; Prawer, SD ; Reilly, DJ ; Ruess, FJ ; Schofield, SR ; Simmons, MY ; Stanley, FE ; Starrett, RP ; Wellard, C ; Yang, C ; Knight, PL ; Hinds, EA ; Plenio, MB (ROYAL SOC, 2003-07-15)We review progress at the Australian Centre for Quantum Computer Technology towards the fabrication and demonstration of spin qubits and charge qubits based on phosphorus donor atoms embedded in intrinsic silicon. Fabrication is being pursued via two complementary pathways: a 'top-down' approach for near-term production of few-qubit demonstration devices and a 'bottom-up' approach for large-scale qubit arrays with sub-nanometre precision. The 'top-down' approach employs a low-energy (keV) ion beam to implant the phosphorus atoms. Single-atom control during implantation is achieved by monitoring on-chip detector electrodes, integrated within the device structure. In contrast, the 'bottom-up' approach uses scanning tunnelling microscope lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. In both cases, surface electrodes control the qubit using voltage pulses, and dual single-electron transistors operating near the quantum limit provide fast read-out with spurious-signal rejection.
ItemControlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ionsJamieson, DN ; Yang, C ; Hopf, T ; Hearne, SM ; Pakes, CI ; Prawer, S ; Mitic, M ; Gauja, E ; Andresen, SE ; Hudson, FE ; Dzurak, AS ; Clark, RG (AMER INST PHYSICS, 2005-05-16)