- School of Physics - Research Publications
School of Physics - Research Publications
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ItemIon beam induced charge and numerical modeling study of novel detector devices for single ion implantationHopf, T ; Jamieson, DN ; Hearne, SM ; Yang, C ; Pakes, CI ; Dzurak, AS ; Gauja, E ; Clark, RG (ELSEVIER, 2005-04)
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ItemControlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ionsJamieson, DN ; Yang, C ; Hopf, T ; Hearne, SM ; Pakes, CI ; Prawer, S ; Mitic, M ; Gauja, E ; Andresen, SE ; Hudson, FE ; Dzurak, AS ; Clark, RG (AMER INST PHYSICS, 2005-05-16)We demonstrate a method for the controlled implantation of single ions into a silicon substrate with energy of sub-20-keV. The method is based on the collection of electron-hole pairs generated in the substrate by the impact of a single ion. We have used the method to implant single 14-keV P31 ions through nanoscale masks into silicon as a route to the fabrication of devices based on single donors in silicon.