Graphene quantum dot based electronic devices
AffiliationElectrical and Electronic Engineering
Document TypePhD thesis
Access StatusOpen Access
© 2018 Dr. Xuan Pan
Among all graphene derivatives, the graphene quantum dot (GQD), a fragment limited in size, or domains, of a single-layer two-dimensional graphene crystal, has been investigated with much interest by the global research community, because of its unique electrical, optical and mechanical properties that arise from quantum confinement effects. Among all properties, negative differential resistance (NDR) has been of particular interest. NDR devices exhibit abnormal electrical characteristics, for instance, the non-ohmic current-voltage (I-V) curve, which enables a number of very important applications. An understanding of the electronic band structure may help build a deeper insight into the NDR phenomenon and guide the building of GQD based devices. This thesis uses models of electronic band structure from solid-state physics and relates the impact of band structure on observed NDR effect. Attention is also given to evaluate electronic transport properties of GQD based two-terminal devices, specifically energy filters and resistor-type memory devices (memristors), by using a non-equilibrium Green function technique implemented within the framework of extended Hückel method. All the numerical simulations use the platform in the commercial Atomistix ToolKit (ATK) package. A two-dimensional GQD structure is shown to offer a promising route for the design of electron energy filters to produce low-power and low-noise electronics as well as volatile memristors utilizing only single layer graphene.
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