A tight binding and (k)over-right-arrow . (p)over-right-arrow study of monolayer stanene
AuthorJiang, L; Marconcini, P; Hossian, MS; Qiu, W; Evans, R; Macucci, M; Skafidas, E
Source TitleScientific Reports
University of Melbourne Author/sSkafidas, Efstratios; Jiang, Liming; Qiu, Wanzhi; Hossain, Md Sharafat; Evans, Robin
AffiliationElectrical and Electronic Engineering
Document TypeJournal Article
CitationsJiang, L., Marconcini, P., Hossian, M. S., Qiu, W., Evans, R., Macucci, M. & Skafidas, E. (2017). A tight binding and (k)over-right-arrow . (p)over-right-arrow study of monolayer stanene. SCIENTIFIC REPORTS, 7 (1), https://doi.org/10.1038/s41598-017-12281-y.
Access StatusOpen Access
Stanene is a single layer of tin atoms which has been discovered as an emerging material for quantum spin Hall related applications. In this paper, we present an accurate tight-binding model for single layer stanene near the Fermi level. We parameterized the onsite and hopping energies for the nearest, second nearest, and third nearest neighbor tight-binding method, both without and with spin orbital coupling. We derived the analytical solution for the [Formula: see text]and [Formula: see text] points and numerically investigated the buckling effect on the material electronic properties. In these points of the reciprocal space, we also discuss a corresponding [Formula: see text] description, obtaining the value of the [Formula: see text] parameters both analytically from the tight-binding ones, and numerically, fitting the ab-initio dispersion relations. Our models provide a foundation for large scale atomistic device transport calculations.
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