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    Charge filling factors in clean and disordered arrays of tunnel junctions

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    Author
    Walker, KA; Vogt, N; Cole, JH
    Date
    2015-12-02
    Source Title
    Scientific Reports
    Publisher
    NATURE PUBLISHING GROUP
    University of Melbourne Author/s
    Cole, Jared
    Affiliation
    School of Physics
    Metadata
    Show full item record
    Document Type
    Journal Article
    Citations
    Walker, K. A., Vogt, N. & Cole, J. H. (2015). Charge filling factors in clean and disordered arrays of tunnel junctions. SCIENTIFIC REPORTS, 5 (1), https://doi.org/10.1038/srep17572.
    Access Status
    Open Access
    URI
    http://hdl.handle.net/11343/256902
    DOI
    10.1038/srep17572
    Abstract
    We simulate one-dimensional arrays of tunnel junctions using the kinetic Monte Carlo method to study charge filling behaviour in the large charging energy limit. By applying a small fixed voltage bias and varying the offset voltage, we investigate this behaviour in clean and disordered arrays (both weak and strong disorder effects). The offset voltage dependent modulation of the current is highly sensitive to background charge disorder and exhibits substantial variation depending on the strength of the disorder. We show that while small fractional charge filling factors are likely to be washed out in experimental devices due to strong background charge disorder, larger factors may be observable.

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