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dc.contributor.authorWalker, KA
dc.contributor.authorVogt, N
dc.contributor.authorCole, JH
dc.date.accessioned2020-12-21T02:22:50Z
dc.date.available2020-12-21T02:22:50Z
dc.date.issued2015-12-02
dc.identifierpii: srep17572
dc.identifier.citationWalker, K. A., Vogt, N. & Cole, J. H. (2015). Charge filling factors in clean and disordered arrays of tunnel junctions. SCIENTIFIC REPORTS, 5 (1), https://doi.org/10.1038/srep17572.
dc.identifier.issn2045-2322
dc.identifier.urihttp://hdl.handle.net/11343/256902
dc.description.abstractWe simulate one-dimensional arrays of tunnel junctions using the kinetic Monte Carlo method to study charge filling behaviour in the large charging energy limit. By applying a small fixed voltage bias and varying the offset voltage, we investigate this behaviour in clean and disordered arrays (both weak and strong disorder effects). The offset voltage dependent modulation of the current is highly sensitive to background charge disorder and exhibits substantial variation depending on the strength of the disorder. We show that while small fractional charge filling factors are likely to be washed out in experimental devices due to strong background charge disorder, larger factors may be observable.
dc.languageEnglish
dc.publisherNATURE PUBLISHING GROUP
dc.titleCharge filling factors in clean and disordered arrays of tunnel junctions
dc.typeJournal Article
dc.identifier.doi10.1038/srep17572
melbourne.affiliation.departmentSchool of Physics
melbourne.source.titleScientific Reports
melbourne.source.volume5
melbourne.source.issue1
dc.rights.licenseCC BY
melbourne.elementsid1231538
melbourne.contributor.authorCole, Jared
dc.identifier.eissn2045-2322
melbourne.accessrightsOpen Access


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