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    Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

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    Author
    Burgess, T; Saxena, D; Mokkapati, S; Li, Z; Hall, CR; Davis, JA; Wang, Y; Smith, LM; Fu, L; Caroff, P; ...
    Date
    2016-06-01
    Source Title
    Nature Communications
    Publisher
    NATURE PUBLISHING GROUP
    University of Melbourne Author/s
    Hall, Christopher
    Affiliation
    School of Chemistry
    Metadata
    Show full item record
    Document Type
    Journal Article
    Citations
    Burgess, T., Saxena, D., Mokkapati, S., Li, Z., Hall, C. R., Davis, J. A., Wang, Y., Smith, L. M., Fu, L., Caroff, P., Tan, H. H. & Jagadish, C. (2016). Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires. NATURE COMMUNICATIONS, 7 (1), https://doi.org/10.1038/ncomms11927.
    Access Status
    Open Access
    URI
    http://hdl.handle.net/11343/257475
    DOI
    10.1038/ncomms11927
    Abstract
    Nanolasers hold promise for applications including integrated photonics, on-chip optical interconnects and optical sensing. Key to the realization of current cavity designs is the use of nanomaterials combining high gain with high radiative efficiency. Until now, efforts to enhance the performance of semiconductor nanomaterials have focused on reducing the rate of non-radiative recombination through improvements to material quality and complex passivation schemes. Here we employ controlled impurity doping to increase the rate of radiative recombination. This unique approach enables us to improve the radiative efficiency of unpassivated GaAs nanowires by a factor of several hundred times while also increasing differential gain and reducing the transparency carrier density. In this way, we demonstrate lasing from a nanomaterial that combines high radiative efficiency with a picosecond carrier lifetime ready for high speed applications.

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