High mobility thin film transistors with transparent ZnO channels
Author
Nishii, J; Hossain, FM; Takagi, S; Aita, T; Saikusa, K; Ohmaki, Y; Ohkubo, I; Kishimoto, S; Ohtomo, A; Fukumura, T; ...Date
2003-04-01Source Title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERSPublisher
JAPAN SOC APPLIED PHYSICSUniversity of Melbourne Author/s
HOSSAIN, FARUQUEAffiliation
PhysicsMetadata
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Journal ArticleCitations
Nishii, J., Hossain, F. M., Takagi, S., Aita, T., Saikusa, K., Ohmaki, Y., Ohkubo, I., Kishimoto, S., Ohtomo, A., Fukumura, T., Matsukura, F., Ohno, Y., Koinuma, H., Ohno, H. & Kawasaki, M. (2003). High mobility thin film transistors with transparent ZnO channels. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 42 (4A), pp.L347-L349. https://doi.org/10.1143/JJAP.42.L347.Access Status
This item is currently not available from this repositoryDescription
C1 - Journal Articles Refereed
Keywords
Condensed Matter Physics - Structural Properties ; Physical SciencesExport Reference in RIS Format
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