High mobility thin film transistors with transparent ZnO channels

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    Author
    Nishii, J; Hossain, FM; Takagi, S; Aita, T; Saikusa, K; Ohmaki, Y; Ohkubo, I; Kishimoto, S; Ohtomo, A; Fukumura, T; ...
    Date
    2003-04-01
    Source Title
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
    Publisher
    JAPAN SOC APPLIED PHYSICS
    University of Melbourne Author/s
    HOSSAIN, FARUQUE
    Affiliation
    Physics
    Metadata
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    Document Type
    Journal Article
    Citations
    Nishii, J., Hossain, F. M., Takagi, S., Aita, T., Saikusa, K., Ohmaki, Y., Ohkubo, I., Kishimoto, S., Ohtomo, A., Fukumura, T., Matsukura, F., Ohno, Y., Koinuma, H., Ohno, H. & Kawasaki, M. (2003). High mobility thin film transistors with transparent ZnO channels. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 42 (4A), pp.L347-L349. https://doi.org/10.1143/JJAP.42.L347.
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    URI
    http://hdl.handle.net/11343/26200
    DOI
    10.1143/JJAP.42.L347
    Description

    C1 - Journal Articles Refereed
    Keywords
    Condensed Matter Physics - Structural Properties ; Physical Sciences

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