Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions
Author
Jamieson, DN; Yang, C; Hopf, T; Hearne, SM; Pakes, CI; Prawer, S; Mitic, M; Gauja, E; Andresen, SE; Hudson, FE; ...Date
2005-05-16Source Title
APPLIED PHYSICS LETTERSPublisher
AMER INST PHYSICSUniversity of Melbourne Author/s
Jamieson, David; YANG, CHANGYI; HOPF, TOBY FELIX; Pakes, Christopher; Prawer, Steven; HEARNE, SEANAffiliation
PhysicsMetadata
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Journal ArticleCitations
Jamieson, D. N., Yang, C., Hopf, T., Hearne, S. M., Pakes, C. I., Prawer, S., Mitic, M., Gauja, E., Andresen, S. E., Hudson, F. E., Dzurak, A. S. & Clark, R. G. (2005). Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions. APPLIED PHYSICS LETTERS, 86 (20), https://doi.org/10.1063/1.1925320.Access Status
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C1 - Journal Articles Refereed
Keywords
Condensed Matter Physics - Electronic and Magnetic Properties; Superconductivity; Physical SciencesExport Reference in RIS Format
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