Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions

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    Author
    Jamieson, DN; Yang, C; Hopf, T; Hearne, SM; Pakes, CI; Prawer, S; Mitic, M; Gauja, E; Andresen, SE; Hudson, FE; ...
    Date
    2005-05-16
    Source Title
    APPLIED PHYSICS LETTERS
    Publisher
    AMER INST PHYSICS
    University of Melbourne Author/s
    Jamieson, David; YANG, CHANGYI; HOPF, TOBY FELIX; Pakes, Christopher; Prawer, Steven; HEARNE, SEAN
    Affiliation
    Physics
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    Document Type
    Journal Article
    Citations
    Jamieson, D. N., Yang, C., Hopf, T., Hearne, S. M., Pakes, C. I., Prawer, S., Mitic, M., Gauja, E., Andresen, S. E., Hudson, F. E., Dzurak, A. S. & Clark, R. G. (2005). Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions. APPLIED PHYSICS LETTERS, 86 (20), https://doi.org/10.1063/1.1925320.
    Access Status
    This item is currently not available from this repository
    URI
    http://hdl.handle.net/11343/26215
    DOI
    10.1063/1.1925320
    Description

    C1 - Journal Articles Refereed
    Keywords
    Condensed Matter Physics - Electronic and Magnetic Properties; Superconductivity; Physical Sciences

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