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    Progress in silicon-based quantum computing

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    Author
    Clark, RG; Brenner, R; Buehler, TM; Chan, V; Curson, NJ; Dzurak, AS; Gauja, E; Goan, HS; Greentree, AD; Hallam, T; ...
    Date
    2003-07-15
    Source Title
    PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    Publisher
    ROYAL SOC
    University of Melbourne Author/s
    Greentree, Andrew; Hollenberg, Lloyd; Jamieson, David; McCallum, Jeffrey; Pakes, Christopher; Prawer, Steven; WELLARD, CAMERON; YANG, CHANGYI
    Affiliation
    Physics
    Metadata
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    Document Type
    Journal Article
    Citations
    Clark, R. G., Brenner, R., Buehler, T. M., Chan, V., Curson, N. J., Dzurak, A. S., Gauja, E., Goan, H. S., Greentree, A. D., Hallam, T., Hamilton, A. R., Hollenberg, L. C. L., Jamieson, D. N., McCallum, J. C., Milburn, G. J., O'Brien, J. L., Oberbeck, L., Pakes, C. I., Prawer, S. D. ,... Yang, C. (2003). Progress in silicon-based quantum computing. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 361 (1808), pp.1451-1471. https://doi.org/10.1098/rsta.2003.1221.
    Access Status
    This item is currently not available from this repository
    URI
    http://hdl.handle.net/11343/26219
    DOI
    10.1098/rsta.2003.1221
    Description

    C1 - Journal Articles Refereed

    Abstract
    We review progress at the Australian Centre for Quantum Computer Technology towards the fabrication and demonstration of spin qubits and charge qubits based on phosphorus donor atoms embedded in intrinsic silicon. Fabrication is being pursued via two complementary pathways: a 'top-down' approach for near-term production of few-qubit demonstration devices and a 'bottom-up' approach for large-scale qubit arrays with sub-nanometre precision. The 'top-down' approach employs a low-energy (keV) ion beam to implant the phosphorus atoms. Single-atom control during implantation is achieved by monitoring on-chip detector electrodes, integrated within the device structure. In contrast, the 'bottom-up' approach uses scanning tunnelling microscope lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. In both cases, surface electrodes control the qubit using voltage pulses, and dual single-electron transistors operating near the quantum limit provide fast read-out with spurious-signal rejection.
    Keywords
    Condensed Matter Physics - Electronic and Magnetic Properties; Superconductivity; Physical Sciences

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