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    Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation

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    Author
    Liu, ACY; McCallum, JC; Wong-Leung, J
    Date
    2001-11-01
    Source Title
    JOURNAL OF MATERIALS RESEARCH
    Publisher
    MATERIALS RESEARCH SOCIETY
    University of Melbourne Author/s
    McCallum, Jeffrey; LIU, AMELIA CHI YING
    Affiliation
    Physics
    Metadata
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    Document Type
    Journal Article
    Citations
    Liu, A. C. Y., McCallum, J. C. & Wong-Leung, J. (2001). Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation. JOURNAL OF MATERIALS RESEARCH, 16 (11), pp.3229-3237. https://doi.org/10.1557/JMR.2001.0445.
    Access Status
    This item is currently not available from this repository
    URI
    http://hdl.handle.net/11343/26262
    DOI
    10.1557/JMR.2001.0445
    Description

    C1 - Journal Articles Refereed

    Abstract
    <jats:p>Solid-phase epitaxy was examined in deep amorphous volumes formed in silicon wafers by multi-energy self-implantation through a mask. Crystallization was effected at elevated temperatures with the amorphous volume being transformed at both lateral and vertical interfaces. Sample topology was mapped using an atomic force microscope. Details of the process were clarified with both plan-view and cross-sectional transmission electron microscopy analyses. Crystallization of the amorphous volumes resulted in the incorporation of a surprisingly large number of dislocations. These arose from a variety of sources. Some of the secondary structures were identified to occur uniquely from the crystallization of volumes in this particular geometry.</jats:p>
    Keywords
    Condensed Matter Physics - Structural Properties ; Physical Sciences

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