Donor activation and damage in Si-SiO2 from low-dose, low-energy ion implantation studied via electrical transport in MOSFETs

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    Author
    McCamey, DR; Francis, M; McCallum, JC; Hamilton, R; Greentree, AD; Clark, RG
    Date
    2005-05-01
    Source Title
    Semiconductor Science and Technology
    Publisher
    IOP PUBLISHING LTD
    University of Melbourne Author/s
    McCallum, Jeffrey; Greentree, Andrew
    Affiliation
    Physics
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    Document Type
    Journal Article
    Citations
    McCamey, D. R., Francis, M., McCallum, J. C., Hamilton, R., Greentree, A. D. & Clark, R. G. (2005). Donor activation and damage in Si-SiO2 from low-dose, low-energy ion implantation studied via electrical transport in MOSFETs. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 20 (5), pp.363-368. https://doi.org/10.1088/0268-1242/20/5/007.
    Access Status
    This item is currently not available from this repository
    URI
    http://hdl.handle.net/11343/26272
    DOI
    10.1088/0268-1242/20/5/007
    Description

    C1 - Journal Articles Refereed
    Keywords
    Condensed Matter Physics - Structural Properties ; Physical Sciences

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