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dc.contributor.authorMcCamey, DR
dc.contributor.authorFrancis, M
dc.contributor.authorMcCallum, JC
dc.contributor.authorHamilton, R
dc.contributor.authorGreentree, AD
dc.contributor.authorClark, RG
dc.date.available2014-05-21T19:25:48Z
dc.date.issued2005-05-01
dc.identifierhttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000229797900010&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=d4d813f4571fa7d6246bdc0dfeca3a1c
dc.identifier.citationMcCamey, D. R., Francis, M., McCallum, J. C., Hamilton, R., Greentree, A. D. & Clark, R. G. (2005). Donor activation and damage in Si-SiO2 from low-dose, low-energy ion implantation studied via electrical transport in MOSFETs. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 20 (5), pp.363-368. https://doi.org/10.1088/0268-1242/20/5/007.
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/11343/26272
dc.descriptionC1 - Journal Articles Refereed
dc.formatapplication/pdf
dc.languageEnglish
dc.publisherIOP PUBLISHING LTD
dc.subjectCondensed Matter Physics - Structural Properties ; Physical Sciences
dc.titleDonor activation and damage in Si-SiO2 from low-dose, low-energy ion implantation studied via electrical transport in MOSFETs
dc.typeJournal Article
dc.identifier.doi10.1088/0268-1242/20/5/007
melbourne.peerreviewPeer Reviewed
melbourne.affiliationThe University of Melbourne
melbourne.affiliation.departmentPhysics
melbourne.source.titleSemiconductor Science and Technology
melbourne.source.volume20
melbourne.source.issue5
melbourne.source.pages363-368
melbourne.publicationid39033
melbourne.elementsid269513
melbourne.contributor.authorMcCallum, Jeffrey
melbourne.contributor.authorGreentree, Andrew
melbourne.internal.ingestnoteAbstract bulk upload (2017-07-20)
dc.identifier.eissn1361-6641
melbourne.accessrightsThis item is currently not available from this repository


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