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dc.contributor.authorJohnson, BC
dc.contributor.authorMcCallum, JC
dc.date.available2014-05-21T19:25:56Z
dc.date.issued2004-04-15
dc.identifierhttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000220586100083&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=d4d813f4571fa7d6246bdc0dfeca3a1c
dc.identifier.citationJohnson, B. C. & McCallum, J. C. (2004). Kinetics of arsenic-enhanced solid phase epitaxy in silicon. JOURNAL OF APPLIED PHYSICS, 95 (8), pp.4427-4431. https://doi.org/10.1063/1.1682672.
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11343/26276
dc.descriptionC1 - Journal Articles Refereed
dc.formatapplication/pdf
dc.languageEnglish
dc.publisherAMER INST PHYSICS
dc.subjectCondensed Matter Physics - Structural Properties ; Physical Sciences
dc.titleKinetics of arsenic-enhanced solid phase epitaxy in silicon
dc.typeJournal Article
dc.identifier.doi10.1063/1.1682672
melbourne.peerreviewPeer Reviewed
melbourne.affiliationThe University of Melbourne
melbourne.affiliation.departmentPhysics
melbourne.source.titleJOURNAL OF APPLIED PHYSICS
melbourne.source.volume95
melbourne.source.issue8
melbourne.source.pages4427-4431
dc.research.coderfcd240202
dc.research.codeseo1998780102
melbourne.publicationid27972
melbourne.elementsid262867
melbourne.contributor.authorJohnson, Brett
melbourne.contributor.authorMcCallum, Jeffrey
melbourne.internal.ingestnoteAbstract bulk upload (2017-07-20)
dc.identifier.eissn1089-7550
melbourne.accessrightsThis item is currently not available from this repository


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