The crystallisation of deep amorphous wells in silicon produced by ion implantation
Author
Liu, ACY; McCallum, JC; Wong-Leung, JDate
2001-04-01Source Title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMSPublisher
ELSEVIER SCIENCE BVAffiliation
PhysicsMetadata
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Journal ArticleCitations
Liu, A. C. Y., McCallum, J. C. & Wong-Leung, J. (2001). The crystallisation of deep amorphous wells in silicon produced by ion implantation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 175, pp.164-168. https://doi.org/10.1016/S0168-583X(01)00335-4.Access Status
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C1 - Journal Articles Refereed
Keywords
Nuclear and Particle Physics ; Physical SciencesExport Reference in RIS Format
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