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dc.contributor.authorLiu, ACY
dc.contributor.authorMcCallum, JC
dc.contributor.authorWong-Leung, J
dc.date.available2014-05-21T19:26:01Z
dc.date.issued2001-04-01
dc.identifierhttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000169389100030&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=d4d813f4571fa7d6246bdc0dfeca3a1c
dc.identifier.citationLiu, A. C. Y., McCallum, J. C. & Wong-Leung, J. (2001). The crystallisation of deep amorphous wells in silicon produced by ion implantation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 175, pp.164-168. https://doi.org/10.1016/S0168-583X(01)00335-4.
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/11343/26278
dc.descriptionC1 - Journal Articles Refereed
dc.formatapplication/pdf
dc.languageEnglish
dc.publisherELSEVIER SCIENCE BV
dc.subjectNuclear and Particle Physics ; Physical Sciences
dc.titleThe crystallisation of deep amorphous wells in silicon produced by ion implantation
dc.typeJournal Article
dc.identifier.doi10.1016/S0168-583X(01)00335-4
melbourne.peerreviewPeer Reviewed
melbourne.affiliationThe University of Melbourne
melbourne.affiliation.departmentPhysics
melbourne.source.titleNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
melbourne.source.volume175
melbourne.source.pages164-168
melbourne.publicationid1630
melbourne.elementsid247749
melbourne.contributor.authorMcCallum, Jeffrey
melbourne.contributor.authorLIU, AMELIA CHI YING
melbourne.internal.ingestnoteAbstract bulk upload (2017-07-20)
melbourne.accessrightsThis item is currently not available from this repository


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