Controlled single electron transfer between Si : P dots
Author
Buehler, TM; Chan, V; Ferguson, AJ; Dzurak, AS; Hudson, FE; Reilly, DJ; Hamilton, AR; Clark, RG; Jamieson, DN; Yang, C; ...Date
2006-05-08Source Title
APPLIED PHYSICS LETTERSPublisher
AMER INST PHYSICSAffiliation
PhysicsMetadata
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Journal ArticleCitations
Buehler, T. M., Chan, V., Ferguson, A. J., Dzurak, A. S., Hudson, F. E., Reilly, D. J., Hamilton, A. R., Clark, R. G., Jamieson, D. N., Yang, C., Pakes, C. I. & Prawer, S. (2006). Controlled single electron transfer between Si : P dots. APPLIED PHYSICS LETTERS, 88 (19), https://doi.org/10.1063/1.2203740.Access Status
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C1 - Journal Articles Refereed
Abstract
We demonstrate electrical control of Si:P double dots in which the potential
is defined by nanoscale phosphorus doped regions. Each dot contains
approximately 600 phosphorus atoms and has a diameter close to 30 nm. On
application of a differential bias across the dots, electron transfer is
observed, using single electron transistors in both dc- and rf-mode as charge
detectors. With the possibility to scale the dots down to few and even single
atoms these results open the way to a new class of precision-doped quantum dots
in silicon.
Keywords
Condensed Matter Physics - Electronic and Magnetic Properties; Superconductivity; Physical SciencesExport Reference in RIS Format
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