Controlled single electron transfer between Si : P dots

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    Author
    Buehler, TM; Chan, V; Ferguson, AJ; Dzurak, AS; Hudson, FE; Reilly, DJ; Hamilton, AR; Clark, RG; Jamieson, DN; Yang, C; ...
    Date
    2006-05-08
    Source Title
    Applied Physics Letters
    Publisher
    AMER INST PHYSICS
    University of Melbourne Author/s
    Jamieson, David; YANG, CHANGYI; Pakes, Christopher; Prawer, Steven
    Affiliation
    Physics
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    Document Type
    Journal Article
    Citations
    Buehler, T. M., Chan, V., Ferguson, A. J., Dzurak, A. S., Hudson, F. E., Reilly, D. J., Hamilton, A. R., Clark, R. G., Jamieson, D. N., Yang, C., Pakes, C. I. & Prawer, S. (2006). Controlled single electron transfer between Si : P dots. APPLIED PHYSICS LETTERS, 88 (19), https://doi.org/10.1063/1.2203740.
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    This item is currently not available from this repository
    URI
    http://hdl.handle.net/11343/26468
    DOI
    10.1063/1.2203740
    Description

    C1 - Journal Articles Refereed
    Abstract
    We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a differential bias across the dots, electron transfer is observed, using single electron transistors in both dc- and rf-mode as charge detectors. With the possibility to scale the dots down to few and even single atoms these results open the way to a new class of precision-doped quantum dots in silicon.
    Keywords
    Condensed Matter Physics - Electronic and Magnetic Properties; Superconductivity; Physical Sciences

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    Publisher URL
    http://dx.doi.org/10.1063/1.2203740
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