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dc.contributor.authorBuehler, TM
dc.contributor.authorChan, V
dc.contributor.authorFerguson, AJ
dc.contributor.authorDzurak, AS
dc.contributor.authorHudson, FE
dc.contributor.authorReilly, DJ
dc.contributor.authorHamilton, AR
dc.contributor.authorClark, RG
dc.contributor.authorJamieson, DN
dc.contributor.authorYang, C
dc.contributor.authorPakes, CI
dc.contributor.authorPrawer, S
dc.date.available2014-05-21T19:33:57Z
dc.date.issued2006-05-08
dc.identifierhttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000237477400039&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=d4d813f4571fa7d6246bdc0dfeca3a1c
dc.identifierARTN 192101
dc.identifier.citationBuehler, T. M., Chan, V., Ferguson, A. J., Dzurak, A. S., Hudson, F. E., Reilly, D. J., Hamilton, A. R., Clark, R. G., Jamieson, D. N., Yang, C., Pakes, C. I. & Prawer, S. (2006). Controlled single electron transfer between Si : P dots. APPLIED PHYSICS LETTERS, 88 (19), https://doi.org/10.1063/1.2203740.
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11343/26468
dc.descriptionC1 - Journal Articles Refereed
dc.description.abstractWe demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a differential bias across the dots, electron transfer is observed, using single electron transistors in both dc- and rf-mode as charge detectors. With the possibility to scale the dots down to few and even single atoms these results open the way to a new class of precision-doped quantum dots in silicon.
dc.languageEnglish
dc.publisherAMER INST PHYSICS
dc.subjectCondensed Matter Physics - Electronic and Magnetic Properties; Superconductivity; Physical Sciences
dc.titleControlled single electron transfer between Si : P dots
dc.typeJournal Article
dc.identifier.doi10.1063/1.2203740
melbourne.peerreviewPeer Reviewed
melbourne.affiliationThe University of Melbourne
melbourne.affiliation.departmentPhysics
melbourne.source.titleApplied Physics Letters
melbourne.source.volume88
melbourne.source.issue19
melbourne.publicationid50216
melbourne.elementsid276408
pubs.publisher-urlhttp://dx.doi.org/10.1063/1.2203740
melbourne.contributor.authorJamieson, David
melbourne.contributor.authorYANG, CHANGYI
melbourne.contributor.authorPakes, Christopher
melbourne.contributor.authorPrawer, Steven
melbourne.internal.ingestnoteAbstract bulk upload (2017-07-20)
dc.identifier.eissn1077-3118
melbourne.accessrightsThis item is currently not available from this repository


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