Differential Etching of ZnO Native Planes under Basic Conditions
Author
Nicholas, NJ; Ducker, W; Franks, GVDate
2012-04-03Source Title
LANGMUIRPublisher
AMER CHEMICAL SOCAffiliation
Chemical And Biomolecular EngineeringMetadata
Show full item recordDocument Type
Journal ArticleCitations
Nicholas, N. J., Ducker, W. & Franks, G. V. (2012). Differential Etching of ZnO Native Planes under Basic Conditions. LANGMUIR, 28 (13), pp.5633-5641. https://doi.org/10.1021/la2047273.Access Status
This item is currently not available from this repositoryDescription
C1 - Journal Articles Refereed
Abstract
The in situ dissolution of polished (0001), (101(-)0), and (0001(-)) surfaces of ZnO was studied using Atomic Force Microscopy under alkaline conditions. In aqueous NaOH solution the (0001) plane forms a stepped surface whereas the (0001(-)) plane converts into more stable {101(-)1(-)} planes. Dissolution of the (101(-)0) plane leaves a combination of (0001) and (101(-)1(-)) planes. Dissolution in solutions containing both NaOH and Na(3)citrate causes the (0001) plane steps to increase in number and reduce in height, and cause an overall increase in the rate of dissolution in the [101(-)0] directions. These observations are explained using a mechanism based on edgewise dissolution where the etching rate depends on the number of surface oxygen atoms per zinc atom. Large areas of single index faces (over 50 μm(2)) of (0001) and (0001(-)), suitable for surface chemistry studies, were also generated by chemical dissolution.
Keywords
Colloid and Surface Chemistry; Expanding Knowledge in EngineeringExport Reference in RIS Format
Endnote
- Click on "Export Reference in RIS Format" and choose "open with... Endnote".
Refworks
- Click on "Export Reference in RIS Format". Login to Refworks, go to References => Import References