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    Differential Etching of ZnO Native Planes under Basic Conditions

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    Author
    Nicholas, NJ; Ducker, W; Franks, GV
    Date
    2012-04-03
    Source Title
    LANGMUIR
    Publisher
    AMER CHEMICAL SOC
    University of Melbourne Author/s
    NICHOLAS, NATHAN; Franks, George; NICHOLAS, NATHAN
    Affiliation
    Chemical And Biomolecular Engineering
    Metadata
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    Document Type
    Journal Article
    Citations
    Nicholas, N. J., Ducker, W. & Franks, G. V. (2012). Differential Etching of ZnO Native Planes under Basic Conditions. LANGMUIR, 28 (13), pp.5633-5641. https://doi.org/10.1021/la2047273.
    Access Status
    This item is currently not available from this repository
    URI
    http://hdl.handle.net/11343/32613
    DOI
    10.1021/la2047273
    Description

    C1 - Journal Articles Refereed

    Abstract
    The in situ dissolution of polished (0001), (101(-)0), and (0001(-)) surfaces of ZnO was studied using Atomic Force Microscopy under alkaline conditions. In aqueous NaOH solution the (0001) plane forms a stepped surface whereas the (0001(-)) plane converts into more stable {101(-)1(-)} planes. Dissolution of the (101(-)0) plane leaves a combination of (0001) and (101(-)1(-)) planes. Dissolution in solutions containing both NaOH and Na(3)citrate causes the (0001) plane steps to increase in number and reduce in height, and cause an overall increase in the rate of dissolution in the [101(-)0] directions. These observations are explained using a mechanism based on edgewise dissolution where the etching rate depends on the number of surface oxygen atoms per zinc atom. Large areas of single index faces (over 50 μm(2)) of (0001) and (0001(-)), suitable for surface chemistry studies, were also generated by chemical dissolution.
    Keywords
    Colloid and Surface Chemistry; Expanding Knowledge in Engineering

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